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CONTROLE DU PROCESSUS TECHNOLOGIQUE DE PRODUCTION DE JONCTIONS P-N EPITAXIQUE ET EPITAXIQUE-PLANARSBUJKO LD; GOJDENKO PP; GURSKIJ LJ et al.1974; VESCI AKAD. NAVUK B.S.S.R., FIZ.-TEKH. NAVUK; S.S.S.R.; DA. 1974; NO 2; PP. 100-104; BIBL. 4 REF.Article

Etats couplés des solitons dans les jonctions Josephson hétérogènesGAL'PERN, YU. S; FILIPPOV, A. T.ZETF. Pis′ma v redakciû. 1984, Vol 86, Num 4, pp 1527-1543, issn 0044-4510Article

Small area planar Nb/Nb Josephson tunnel junction with hugh current densityTAKAYANAGI, H; KAWAKAMI, T.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 43-45, issn 0021-4922Article

Distribution du champ magnétique dans des jonctions Josephson bidimensionnellesVABISHCHEVICH, P. N; VASENKO, S. A; LIKHAREV, K. K et al.ZETF. Pis′ma v redakciû. 1984, Vol 86, Num 3, pp 1132-1141, issn 0044-4510Article

Interaction of niobium counter electrodes with aluminium oxide and rare-earth oxide barriersRONAY, M; LATTA, E. E.Physical review. B, Condensed matter. 1983, Vol 27, Num 3, pp 1605-1609, issn 0163-1829Article

SUR LES PROPRIETES D'ELECTROLUMINESCENCE DE L'ARSENIURE DE GALLIUMSPIVAK VS.1971; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1971; NO 94; PP. 117-119; BIBL. 2 REF.Serial Issue

ETUDE DU RETARD A L'ETABLISSEMENT DE L'ELECTROLUMINESCENCE D'UNE STRUCTURE PN, ET DE SA RELATION AVEC LA CAPACITE DE JONCTIONTSARENKOV BV; IMENKOV AN; POPOV IV et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2364-2369; BIBL. 5 REF.Serial Issue

PHOTOSENSITIVE TUNNEL JUNCTIONS AND PHOTOSENSITIVE GRANULAR FILMS WITH TE OR SE BARRIERS.TSUBOI T.1976; PHYS. LETTERS, A; NETHERL.; DA. 1976; VOL. 56; NO 6; PP. 472-474; BIBL. 10 REF.Article

EPITAXIAL SILICON P-N JUNCTIONS ON POLYCRYSTALLINE "RIBBON" SUBSTRATES.KRESSEL H; ROBINSON P; MCFARLANE SH et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 197-199; BIBL. 3 REF.Article

JONCTIONS P-N DIFFUSEES DANS LE CARBURE DE SILICIUM CUBIQUEALTAJSKIJ YU M; ZUEV VL; KALABUKHOV IP et al.1972; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1972; VOL. 15; NO 9; PP. 1166-1169; BIBL. 7 REF.Serial Issue

ETUDE DE LA DISPERSION DE LA CAPACITE DE BARRIERE DES DIODES AU SILICIUM P TRES RESISTIF A IMPURETES PROFONDESDMITRENKO NN; KURILO PM; LITOVCHENKO PG et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON. U.S.S.R.; S.S.S.R.; DA. 1974; NO 17; PP. 24-29; BIBL. 6 REF.Article

Properties of superconducting p-n junctionsMANNHART, J; KLEINSASSER, A; STRÖBEL, J et al.Physica. C. Superconductivity. 1993, Vol 216, Num 3-4, pp 401-416, issn 0921-4534Article

SIMPLE RELATIONSHIP BETWEEN THE BREAKDOWN VOLTAGE, CONCENTRATION, AND JUNCTION DEPTH FOR DIFFUSED PN JUNCTIONSRANG T.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K117-K119; BIBL. 13 REF.Article

INERTIE D'UN "FILAMENT" DE COURANT ET INFLUENCE DE REACTIONS EXTERIEURES SUR SA STABILITE LORS DE LA DISRUPTION SECONDAIRE DE JONCTIONS P-NVALATSKA K; VISHNYAUSKAS YU; MACHYULAJTIS CH et al.1979; LITOV. FIZ. SB.; ISSN 0024-2969; SUN; DA. 1979; NO 4; PP. 533-541; ABS. LIT/ENG; BIBL. 6 REF.Article

On the relationship between the bulk recombination lifetime and the excess 1/f noise in silicon p-n junction diodesSIMOEN, E; VANHELLEMONT, J; CLAEYS, C et al.Solid state communications. 1996, Vol 98, Num 11, pp 961-964, issn 0038-1098, 3 p.Article

A mathematical study of general analytical models for step p-n semiconductor junctionsYING-CHAO RUAN; PARANJAPE, B. V; JING-QING TANG et al.Journal of applied physics. 1985, Vol 58, Num 7, pp 2662-2671, issn 0021-8979Article

Mécanisme de fluctuation des courants tunnel excédentaires de jonctions p-n polarisées inversementRAJKH, M. EH; RUZIN, I. M.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 7, pp 1217-1225, issn 0015-3222Article

Sensibilité maximale de mélangeurs microondes utilisant des jonctions supraconductricesZORIN, A. B; LIKHAREV, K. K.Radiotehnika i èlektronika. 1985, Vol 30, Num 6, pp 1200-1204, issn 0033-8494Article

ESR in situ with a Josephson tunnel junction = Etude RPE in situ avec une jonction tunnel JosephsonBABERSCHKE, K; BURES, K. D; BARNES, S. E et al.Physical review letters. 1984, Vol 53, Num 1, pp 98-101, issn 0031-9007Article

Recombination current in abrupt semiconductor p-n junctionsSIMEONOV, S. S; IVANOVICH, M. D.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 275-284, issn 0031-8965Article

Josephson arrays for dc and ac metrologyNIEMEYER, J.Superconductor science & technology (Print). 2000, Vol 13, Num 5, pp 546-550, issn 0953-2048Conference Paper

Josephson properties of Nb3Ge/oxide/Pb tunnel junctionsTANABE, K; ASANO, H; MICHIKAMI, O et al.Applied physics letters. 1984, Vol 44, Num 5, pp 559-561, issn 0003-6951Article

Capacité et distribution du champ électrique dans une structure p-n abrupte asymétrique à couche d'inversion intermédiaireKONSTANTINOV, O. V; MEZRIN, O. A.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 12, pp 2166-2176, issn 0015-3222Article

Tunneling measurements on A15 Nb-Si filmsASANO, H; NAKAMURA, K; MAEDA, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 32-34, issn 0021-4922Article

NEGATIVE KRUEMMUNG DER KAPAZITAETS-SPANNUNGS-KENNLINIE BEI HYPERABRUPTEN UBERGAENGEN = COURBURE NEGATIVE DE LA CARACTERISTIQUE CAPACITE-TENSION DANS LE CAS DE JONCTIONS PN HYPERABRUPTES1972; FREQUENZ; DTSCH.; DA. 1972; VOL. 26; NO 8; PP. 224-226; ABS. ANGL.; BIBL. 1 REF.Serial Issue

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